Title :
Planar-doped barriers in GaAs by molecular beam epitaxy
Author :
Malik, R.J. ; Aucoin, T.R. ; Ross, R.L. ; Board, K. ; Wood, C.E.C. ; Eastman, L.F.
Author_Institution :
US Army Electronics Command, Electronics Technology & Devices Laboratory, Fort Monmouth, USA
Abstract :
A new majority carrier rectifying device is demonstrated which is made in gallium arsenide by molecular beam epitaxy. It exhibits thermionic transport with positive and negative bias and the barrier height and degree of asymmetry in the I/V characteristic can be continuously varied. The device also shows a constant capacitance with bias.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor diodes; GaAs; MBE; barrier height; constant capacitance; majority carrier rectifying device; molecular beam epitaxy; thermionic transport;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800594
