Title :
n-channel m.i.s.f.e.t.s in epitaxial HgCdTe/CdTe
Author :
Williams, George M. ; Gertner, E.R.
Author_Institution :
Rockwell International, Science Center, Thousand Oaks, USA
Abstract :
M.I.S.F.E.T.s have been fabricated in HgCdTe epitaxially grown on CdTe substrates. These planar n-channel f.e.t.s use ZnS as the insulator and Be ion implantation for the source and drain regions. Surface mobilities of 7×103 cm3/Vs at 77 K are reported.
Keywords :
II-VI semiconductors; cadmium compounds; insulated gate field effect transistors; mercury compounds; semiconductor epitaxial layers; tellurium compounds; Be ion implantation; HgCdTe/CdTe; II-VI semiconductor; MISFET; ZnS; epitaxial growth; surface mobility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800596
