Title :
AlGaAs heterostructure injection laser s.c.r.
Author :
Katz, Justin ; Bar-Chaim, N. ; Margalit, S. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, USA
Abstract :
The operation of a gate-controlled p-n-p-n injection laser device has been demonstrated. The switching is accomplished by an electrical control signal. The threshold current of the laser incorporated into the device is about 100 mA, and its optical properties are similar to those of the Be-implanted laser reported recently.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; semiconductor junction lasers; thyristors; AlGaAs heterostructure injection laser SCR; III-V semiconductor; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800597
