Elimination of emitter edge dislocations in silicon planar n-p-n transistors

It is shown that the conventional method for elimination of emitter edge dislocations, which consists of a low concentration emitter phosphorus diffusion, has two disadvantages: it increases reverse emitter-base current and reduces current gain at low currents. Also, it is shown that the mentioned disadvantages can be successfully avoided by a new method for elimination of emitter edge dislocations, which consists of a high concentration emitter phosphorus diffusion followed by an additional shallow boron diffusion.