Title :
Dual wavelength surface emitting InGaAsP l.e.d.s
Author :
Lee, T.P. ; Burrus, C.A. ; Dentai, A.G.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Surface emitting l.e.d.s capable of simultaneous emission near 1.14 ¿m and 1.3 ¿m wavelengths, from an area 75 ¿m × 75 ¿m. have been fabricated and tested. Outputs of 0.5 mW and 0.8 mW, respectively, were obtained at the two wavelengths in initial devices driven at 50 mA d c. The measured crosstalk was ¿23.9 dB (electrical).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; 1.14 micron wavelength; 1.3 micron wavelength; III-V semiconductor; crosstalk; surface emitting InGaAsP LEDs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800600
