Title :
Physical dependence of output conductance of voltage driven b.j.t.s
Author_Institution :
Peking Research Institute of Semiconductor Devices, Beijing, China
Abstract :
A simple expression for the current dependency of the output conductance of voltage driven b.j.t.s is derived. It is found that because of the effect of basewidth modulation on the base transit time there is an additional output conductance component, which is important in some widely used linear i.c. configurations.
Keywords :
bipolar transistors; base transit time; basewidth modulation; output conductance; voltage driven bipolar junction transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800613
