• DocumentCode
    967580
  • Title

    Physical dependence of output conductance of voltage driven b.j.t.s

  • Author

    Ming-Guang, Yi

  • Author_Institution
    Peking Research Institute of Semiconductor Devices, Beijing, China
  • Volume
    16
  • Issue
    22
  • fYear
    1980
  • Firstpage
    861
  • Lastpage
    862
  • Abstract
    A simple expression for the current dependency of the output conductance of voltage driven b.j.t.s is derived. It is found that because of the effect of basewidth modulation on the base transit time there is an additional output conductance component, which is important in some widely used linear i.c. configurations.
  • Keywords
    bipolar transistors; base transit time; basewidth modulation; output conductance; voltage driven bipolar junction transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800613
  • Filename
    4245385