DocumentCode
967580
Title
Physical dependence of output conductance of voltage driven b.j.t.s
Author
Ming-Guang, Yi
Author_Institution
Peking Research Institute of Semiconductor Devices, Beijing, China
Volume
16
Issue
22
fYear
1980
Firstpage
861
Lastpage
862
Abstract
A simple expression for the current dependency of the output conductance of voltage driven b.j.t.s is derived. It is found that because of the effect of basewidth modulation on the base transit time there is an additional output conductance component, which is important in some widely used linear i.c. configurations.
Keywords
bipolar transistors; base transit time; basewidth modulation; output conductance; voltage driven bipolar junction transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800613
Filename
4245385
Link To Document