• DocumentCode
    967624
  • Title

    Pulsed V-band m.b.e. Si IMPATT diodes

  • Author

    Freyer, J. ; Kasper, E. ; Barth, H.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
  • Volume
    16
  • Issue
    23
  • fYear
    1980
  • Firstpage
    865
  • Lastpage
    866
  • Abstract
    Single drift Impatt diodes of m.b.e. material are described which deliver pulse output power over 5 W at V-band. Maximum chirp frequency is less than 10 MHz, making the devices favourable for coherent radar applications.
  • Keywords
    IMPATT diodes; elemental semiconductors; semiconductor epitaxial layers; silicon; MBE; Si IMPATT diodes; V-band; chirp frequency; coherent radar applications; pulse output power; single drift diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800617
  • Filename
    4245390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967624