Title :
Pulsed V-band m.b.e. Si IMPATT diodes
Author :
Freyer, J. ; Kasper, E. ; Barth, H.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
Single drift Impatt diodes of m.b.e. material are described which deliver pulse output power over 5 W at V-band. Maximum chirp frequency is less than 10 MHz, making the devices favourable for coherent radar applications.
Keywords :
IMPATT diodes; elemental semiconductors; semiconductor epitaxial layers; silicon; MBE; Si IMPATT diodes; V-band; chirp frequency; coherent radar applications; pulse output power; single drift diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800617
