Title :
A two-dimensional DFB laser model accounting for carrier transport effects
Author :
Sadovnikov, Alexei D. ; Li, Xun ; Huang, Wei-Ping
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
10/1/1995 12:00:00 AM
Abstract :
A two-dimensional numerical model for DFB semiconductor laser simulation is developed and presented. In this model the transverse carrier transport and longitudinal spatial/spectral hole-burning effects in a bulk DFB laser are accounted for rigorously. Comparison with simplified models is made. Methods for improving the accuracy of steady-state and small-signal analyses by the simplified models are proposed and verified
Keywords :
carrier density; distributed feedback lasers; electron-hole recombination; laser theory; optical hole burning; semiconductor device models; semiconductor lasers; DFB semiconductor laser simulation; accuracy; bulk DFB laser; carrier transport effects; longitudinal spatial hole-burning effects; small-signal analysis; spectral hole-burning effects; steady-state analysis; transverse carrier transport; two-dimensional DFB laser model; two-dimensional numerical model; Equations; Frequency; High speed optical techniques; Laser feedback; Laser modes; Optical feedback; Optical refraction; Optical variables control; Reflectivity; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
