• DocumentCode
    967677
  • Title

    Ballistic electron transport in a nonparabolic band

  • Author

    Socha, J.B. ; Rees, G.J.

  • Author_Institution
    Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
  • Volume
    16
  • Issue
    23
  • fYear
    1980
  • Firstpage
    872
  • Lastpage
    873
  • Abstract
    The effect of conduction band nonparabolicity is incorporated into calculations of one-dimensional current/voltage characteristics in the ballistic regime. This modification does not remove the discrepancy between theory and experiment at higher voltages, which is thus probably due to scattering.
  • Keywords
    carrier mobility; electrical conductivity of crystalline semiconductors and insulators; semiconductors; ballistic electron transport; conduction band nonparabolicity; nonparabolic band; one dimensional current voltage characteristics; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800622
  • Filename
    4245395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967677