Title :
Method for reproducible l.p.e. growth of GaInAsP
Author :
Janson, M. ; Josefsson, A.
Author_Institution :
Institute of Microwave Technology, Stockholm, Sweden
Abstract :
A method for l.p.e. growth of GaInAsP at constant temperature (step cooling) which allows accurate and simple control of the melt supersaturation is described. Good thickness control and reproducibility of lattice parameters when using the same melt several times is also shown to be obtained.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaInAsP; lattice parameters; melt supersaturation; reproducible LPE growth; thickness control;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800627
