DocumentCode
967773
Title
Hg0.4Cd0.6Te 1.55-μm avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band
Author
Orsal, Bernard ; Alabedra, Robert ; Valenza, Mattéo ; Lecoy, Gilles P. ; Meslage, J. ; Boisrobert, C.Y.
Author_Institution
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Volume
35
Issue
1
fYear
1988
fDate
1/1/1988 12:00:00 AM
Firstpage
101
Lastpage
107
Abstract
The authors describe the electrical and optical characterization of three Hg1-xCdxTe avalanche photodiodes manufactured using planar technology with composition parameter x near 0.6. This alloy composition leads to devices that are well suited for 1.55-μm detection. From the noise analysis under multiplication, the authors show the tight dependence of the ratio β/α (of the hole; and electron ionization coefficient, respectively) upon x and the ratio Δ/E g where Δ is the spin-orbit splitting energy and E g is the bandgap energy. It turns out that in these alloys around x =0.6, Δ is very close to the bandgap energy so β/α reaches its maximum value. Owing to this property, which is characteristic of II-VI compounds, Hg1-xCdxTe is a good candidate for 1.3-μm to 1.6-μm avalanche photodiodes
Keywords
II-VI semiconductors; avalanche photodiodes; cadmium compounds; electron device noise; impact ionisation; mercury compounds; photodetectors; 1.3 to 1.6 micron; 1.55 micron; APD; Hg0.4Cd0.6Te avalanche photodiode; bandgap energy; multiplication; noise analysis; optical characterization; photodetector; planar technology; resonant impact ionization; spin-orbit split-off band; Avalanche photodiodes; Charge carrier processes; Ionization; Lead; Manufacturing; Mercury (metals); Optical noise; Photonic band gap; Signal to noise ratio; Tellurium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2424
Filename
2424
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