DC to 40-GHz broad-band amplifiers using AlGaAs/GaAs HBT´s

Author

Kuriyama, Yasuhiko ; Akagi, Junko ; Sugiyama, Tohru ; Hongo, Sadato ; Tsuda, Kunio ; Iizuka, Norio ; Obara, Masao

Author_Institution

Mater. & Devices Res. Lab., Toshiba Res. & Dev. center, Kawasaki, Japan

Volume

30

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1051

Lastpage

1054

Abstract

In this paper, we report two types of broad-band amplifiers implemented with AlGaAs/GaAs HBT´s. One is a Darlington feedback amplifier and the other is a transimpedance amplifier. In the former circuit, a dc gain of 9.5 dB and a -3-dB bandwidth of 40 GHz were achieved. In the latter circuit, a transimpedance gain of 50 dBΩ and a -3-dB bandwidth of 27 GHz were achieved. To our best knowledge, they are the highest speed in each circuit configuration

Keywords

III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; optical communication equipment; optical fibre communication; wideband amplifiers; 0 to 40 GHz; 3-dB bandwidth; 9.5 dB; AlGaAs-GaAs; Darlington feedback amplifier; HBTs; broadband amplifiers; dc gain; optical communication applications; transimpedance amplifier; transimpedance gain; Bandwidth; Conductivity; Contact resistance; Doping; Feedback amplifiers; Feedback circuits; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical receivers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.466080

Filename

466080