• DocumentCode
    967819
  • Title

    O.M. v.p.e. growth of AlGaSb and AlGaAsSb

  • Author

    Cooper, C.B. ; Saxena, R.R. ; Ludowise, M.J.

  • Author_Institution
    Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
  • Volume
    16
  • Issue
    23
  • fYear
    1980
  • Firstpage
    892
  • Lastpage
    893
  • Abstract
    The epitaxial growth of AlGaSb and AlGaAsSb alloys by o.m. v.p.e. is reported. The growth technique and the dependence of the alloy composition on the input flux of gases are discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; semiconductor growth; vapour phase epitaxial growth; AlGaAsSb; AlGaSb; VPE; growth technique; organometallic vapour phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800636
  • Filename
    4245409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967819