Title :
Operation of 3µm bubble serial loop devices designed on single level masking
Author :
Asama, K. ; Nakajima, H. ; Komenou, K. ; Satoh, Y. ; Miyashita, T. ; Ihaya, A.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
fDate :
9/1/1978 12:00:00 AM
Abstract :
An all-permalloy single mask level design for a serial loop circuit has been developed and successfully operated using 3 μm bubbles. The design of individual elements for a single level circuit such as generator, replicator and annihilator which were compatible with half-disk propagation patterns was successfully investigated and optimization of permalloy and SiO2spacer film thickness was achieved. The small capacity test chips fabricated provided 13-16 Oe "window margins" with circular drive field ranges of 40 to 50 Oe at 100 kHz. The critical stretching pulse phase margin for replication, which was the minimum phase margin for all functions was found to be 10 degrees. Details of design and characteristics are also discussed including operating margin dependence on frequency and temperature.
Keywords :
Magnetic bubble device fabrication; Magnetic bubble memories; Circuit testing; Electron beams; Fabrication; Frequency; Garnet films; Geometry; Pulse circuits; Pulse generation; Temperature dependence; Thick film circuits;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1978.1059975