• DocumentCode
    967830
  • Title

    InGaAsP/InGaAs heterojunction p-i-n detectors with low dark current and small capacitance for 1.3¿1.6 ¿m fibre optic systems

  • Author

    Capasso, Federico ; Logan, R.A. ; Hutchinson, Allan ; Manchon, D.D.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    16
  • Issue
    23
  • fYear
    1980
  • Firstpage
    893
  • Lastpage
    895
  • Abstract
    A new long wavelength p-i-n photodetector, consisting of an In0.53 Ga0.47 As absorbing layer and an adjacent InGaAsP p-n junction is demonstrated. These diodes exhibit dark currents as low as 0.2 nA and a capacitance < 0.5 pF at ¿ 10 V for a device area of 1.3 × 10¿4 cm2. The external quantum efficiency is ¿ 60% at ¿ = 1.3 ¿m for front illumination. A systematic study of the background doping of the quaternary layers using different InP sources is also reported.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; p-n heterojunctions; photodetectors; 1.3 to 1.6 microns; InGaAsP-InGaAs heterojunction; background doping; diodes; external quantum efficiency; fibre optic systems; long wavelength p-i-n photodetector; low dark current; p-n junction; quaternary layers; small capacitance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800637
  • Filename
    4245410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967830