DocumentCode
967875
Title
Extrinsic photoconductivity in platinum-doped silicon
Author
Bickley, W.P. ; Eddolls, D.V. ; Maher, E.F.
Author_Institution
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Volume
16
Issue
23
fYear
1980
Firstpage
898
Lastpage
899
Abstract
Both n- and p-type silicon have been doped with platinum and characterised by measurement of carrier concentration profile, resistivity/temperature, Hall mobility and conductivity measurements. It is concluded that photoconductivity is limited by recombination at uncompensated platinum centres in heavily doped material, and at 100 K by trapping at shallow levels.
Keywords
elemental semiconductors; heavily doped semiconductors; photoconductivity; platinum; silicon; Hall mobility; Si:Pt; carrier concentration profile; conductivity; extrinsic photoconductivity; heavily doped material; recombination; trapping at shallow levels; uncompensated Pt centres;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800640
Filename
4245413
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