Title :
Extrinsic photoconductivity in platinum-doped silicon
Author :
Bickley, W.P. ; Eddolls, D.V. ; Maher, E.F.
Author_Institution :
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
Both n- and p-type silicon have been doped with platinum and characterised by measurement of carrier concentration profile, resistivity/temperature, Hall mobility and conductivity measurements. It is concluded that photoconductivity is limited by recombination at uncompensated platinum centres in heavily doped material, and at 100 K by trapping at shallow levels.
Keywords :
elemental semiconductors; heavily doped semiconductors; photoconductivity; platinum; silicon; Hall mobility; Si:Pt; carrier concentration profile; conductivity; extrinsic photoconductivity; heavily doped material; recombination; trapping at shallow levels; uncompensated Pt centres;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800640
