• DocumentCode
    967925
  • Title

    Microwave power amplification with InP f.e.t.s

  • Author

    Armand, M. ; Chevrier, J. ; Linh, Nuyen T.

  • Author_Institution
    Thomson-CSF, LCR, Orsay, France
  • Volume
    16
  • Issue
    24
  • fYear
    1980
  • Firstpage
    906
  • Lastpage
    907
  • Abstract
    InP f.e.t.s were fabricated from v.p.e. layers, with an Al gate of 1.5 ¿m × 308 ¿m. The power output at 9 GHz, with 4 dB gain, was 1.15 W/mm gate width. This result is believed to be higher than the best published results obtained with equivalent GaAs f.e.t. structures.
  • Keywords
    III-V semiconductors; field effect transistors; indium compounds; power transistors; semiconductor epitaxial layers; solid-state microwave devices; Al gate; III-V semiconductors; InP FETs; VPE; microwave power amplification;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800645
  • Filename
    4245419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967925