Title :
Nonlinear yield analysis and optimization of monolithic microwave integrated circuits
Author :
D´Agostino, Stefano ; Paoloni, Claudio
Author_Institution :
Dipartimento di Ingegneria Elettronica, La Sapienza Univ., Rome, Italy
fDate :
10/1/1995 12:00:00 AM
Abstract :
In this paper, a discussion about nonlinear yield evaluation and nonlinear yield optimization of MMIC circuits using a physics-based nonlinear lumped-element MESFET model is presented. The lumped elements of the MESFET model are directly calculated by closed expressions related to process parameters. One of the main features of the model is the easy and effective implementation in commercial CAD tools. It allows the use of nonlinear yield algorithms assuming, as statistical variables, the parameters of the technological process, such as: doping density, gate channel length, etc., maintaining at the same time, the advantages of lumped-element MESFET model, in particular fast computation and reduction of convergence problems in harmonic balance for complex circuit topologies
Keywords :
Schottky gate field effect transistors; circuit optimisation; equivalent circuits; field effect MMIC; integrated circuit modelling; integrated circuit yield; semiconductor device models; MMIC circuits; commercial CAD tools; complex circuit topologies; convergence; doping density; gate channel length; harmonic balance; lumped-element MESFET model; monolithic microwave integrated circuits; nonlinear yield algorithms; nonlinear yield analysis; physics-based nonlinear MESFET model; statistical variables; yield optimization; Dielectric substrates; Integrated circuit modeling; Integrated circuit yield; MESFET circuits; MESFET integrated circuits; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Performance analysis; Semiconductor process modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
