DocumentCode
968053
Title
A unified method for finding approximations to impurity profiles from a two-step diffusion process
Author
Wang, Way-Seen
Author_Institution
National Taiwan University, Taiwan, Republic of China
Volume
71
Issue
1
fYear
1983
Firstpage
179
Lastpage
180
Abstract
A unified method, based on some simple ideas, for finding approximations to impurity profiles from a two-step diffusion process is presented. The approximate profiles are simple and accurate enough for the evaluation of device fabrication parameters, such as junction depth, sheet resistance, total number of impurities, etc.
Keywords
Circuits; Delay effects; Diffusion processes; Equations; Fabrication; Frequency; Gold; Intermodulation distortion; Semiconductor impurities; Signal analysis;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1983.12542
Filename
1456810
Link To Document