Metal foundation construction to consolidate electroplated structures for successful removal of SU-8 mould

Author

Cui, F. ; Chen, W.-Y. ; Zhao, X.L. ; Jing, X.-M. ; Wu, X.S.

Author_Institution

Res. Inst. of Micro/Nano Sci. & Technol., Shanghai Jiaotong Univ., China

Volume

42

Issue

12

fYear

2006

fDate

6/8/2006 12:00:00 AM

Firstpage

690

Lastpage

691

Abstract

For integrating thick microstructures with microfabricated circuitry on the same chip, a metal foundation method to consolidate adhesion of the electroplated microstructures to the substrate for successful removal of SU-8 mould is proposed. Along with multilevel interconnections microfabrication or other required metal deposition, the metal foundations are constructed and then tamped by interlevel dielectric. With metal foundations formed along with fabrication of interconnections and thin film electrodes, the electroplated Ni structures of an electrostatically levitated rotational microgyro, with thickness of 200 μm after lapping the whole wafer, are successfully released by removing the SU-8 mould using the fuming sulphuric acid oxidising method.

Keywords

electrodes; electroplated coatings; integrated circuit interconnections; nickel; photoresists; thin film circuits; 200 micron; Ni; SU-8 mould removal; electroplated Ni structures; electroplated microstructures; electroplated structures; electrostatically levitated rotational microgyro; interlevel dielectric; metal deposition; metal foundation construction; metal foundations; multilevel interconnection microfabrication; sulfuric acid oxidising method; thin film electrodes;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20060751

Filename

1642478