Title :
Metal foundation construction to consolidate electroplated structures for successful removal of SU-8 mould
Author :
Cui, F. ; Chen, W.-Y. ; Zhao, X.L. ; Jing, X.-M. ; Wu, X.S.
Author_Institution :
Res. Inst. of Micro/Nano Sci. & Technol., Shanghai Jiaotong Univ., China
fDate :
6/8/2006 12:00:00 AM
Abstract :
For integrating thick microstructures with microfabricated circuitry on the same chip, a metal foundation method to consolidate adhesion of the electroplated microstructures to the substrate for successful removal of SU-8 mould is proposed. Along with multilevel interconnections microfabrication or other required metal deposition, the metal foundations are constructed and then tamped by interlevel dielectric. With metal foundations formed along with fabrication of interconnections and thin film electrodes, the electroplated Ni structures of an electrostatically levitated rotational microgyro, with thickness of 200 μm after lapping the whole wafer, are successfully released by removing the SU-8 mould using the fuming sulphuric acid oxidising method.
Keywords :
electrodes; electroplated coatings; integrated circuit interconnections; nickel; photoresists; thin film circuits; 200 micron; Ni; SU-8 mould removal; electroplated Ni structures; electroplated microstructures; electroplated structures; electrostatically levitated rotational microgyro; interlevel dielectric; metal deposition; metal foundation construction; metal foundations; multilevel interconnection microfabrication; sulfuric acid oxidising method; thin film electrodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060751