• DocumentCode
    968192
  • Title

    Low-threshold high-To constricted double heterojunction AlGaAs diode lasers

  • Author

    Botez, D. ; Connolly, J.C.

  • Author_Institution
    RCA Laboratories, Princeton, USA
  • Volume
    16
  • Issue
    25
  • fYear
    1980
  • Firstpage
    942
  • Lastpage
    944
  • Abstract
    Constricted double heterojunction (c.d.h.) diode lasers of relatively low c.w. thresholds (28¿40 mA) are obtained by growing structures that maximise the amount of current flow into the lasing spot. These values are obtained while still using standard 10 ¿m wide oxide-defined stripe contacts. Over the 20¿70°C temperature interval, we find threshold current temperature coefficients as high as 320°C and a virtually constant external differential quantum efficiency.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 20 to 70degrees C; 28 to 40 mA threshold; 320degrees C; AlGaAs; constricted double heterojunction diode lasers; differential quantum efficiency; semiconductor junction lasers; threshold current temperature coefficients;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800671
  • Filename
    4245446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968192