• DocumentCode
    968228
  • Title

    Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing

  • Author

    Wang, Y. ; Djie, H.S. ; Ooi, B.S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • Volume
    42
  • Issue
    12
  • fYear
    2006
  • fDate
    6/8/2006 12:00:00 AM
  • Firstpage
    699
  • Lastpage
    701
  • Abstract
    The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2 cm-1 in the passive waveguide section has been measured.
  • Keywords
    III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; ion implantation; laser cavity resonators; quantum well lasers; waveguide lasers; InGaAs-InGaAsP; ion-implantation induced intermixing; monolithic extended cavity laser; monolithic extended cavity ridge laser; passive waveguide section; propagation loss; quantum-well structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20061270
  • Filename
    1642484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968228