Title :
Leakage mechanisms in the trench transistor DRAM cell
Author :
Banerjee, Sanjay ; Coleman, Donald, Jr. ; Richardson, William ; Shah, Ashwin
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
1/1/1988 12:00:00 AM
Abstract :
The authors discuss a band-to-band tunneling mechanism in the trench transistor cell (TTC), which is used in Texas Instruments´ 4-Mbit DRAM. This effect should be operative in the class of trench cells in which the charge is stored inside the trench and the substrate forms a capacitor plate. This effect does not compromise the functionality of the cell; in fact, it has the potential of improving the long-term reliability of the cell by preventing electrical overstress of the trench capacitor oxide
Keywords :
field effect integrated circuits; integrated circuit testing; integrated memory circuits; leakage currents; random-access storage; tunnelling; 4 Mbit; Texas Instruments; band-to-band tunneling mechanism; electrical overstress; leakage mechanisms; long-term reliability; trench capacitor oxide; trench transistor DRAM cell; Capacitance; Capacitors; Dielectric substrates; Epitaxial layers; Etching; Instruments; Plugs; Process design; Random access memory; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
