Title :
Gallium-nitride microwave Doherty power amplifier with 40 W PEP and 68% PAE
Author :
Cho, K.J. ; Kim, W.J. ; Stapleton, S.P. ; Kim, J.H. ; Lee, B. ; Choi, J.J. ; Kim, J.Y.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
6/8/2006 12:00:00 AM
Abstract :
A 40 W gallium-nitride microwave Doherty power amplifier for WCDMA repeater applications is presented. The main amplifier and peaking amplifier are implemented using two 20 W PEP GaN HEMTs. Performance is evaluated for broadband gain, power efficiency and adjacent-channel-power-ratio (ACPR). Experimental results of the GaN Doherty amplifier yielded a power gain of over 11 dB from 1.8 to 2.5 GHz, 68% power added efficiency at 40 W peak power. Good linearity performance of -48 dBc ACPR is obtained at a peak-to-average ratio of 9.8 dB.
Keywords :
HEMT integrated circuits; III-V semiconductors; code division multiple access; gallium compounds; microwave power amplifiers; repeaters; wide band gap semiconductors; 1.8 to 2.5 GHz; 20 W; 40 W; Doherty power amplifier; GaN; PEP HEMT; WCDMA repeater; adjacent-channel-power-ratio; broadband gain; microwave power amplifier; power added efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061004
