Title :
Influence of InGaN channel thickness on electrical characteristics of AlGaN/InGaN/GaN HFETs
Author :
Wang, R.-L. ; Su, Y.K. ; Chen, K.-Y.
Author_Institution :
Dept. of Microelectron. Eng., Nat. Kaohsiung Marine Univ., Taiwan
fDate :
6/8/2006 12:00:00 AM
Abstract :
The electrical performance of AlGaN/InGaN/GaN heterostructure field effect transistors (HFETs) with and without an InGaN channel layer is studied. Four structures with InGaN carrier confinement layers of 0, 100, 300 and 500 Å thickness were deposited. The channel of InGaN layer was found to enhance the sheet concentration. The gate length is 1 μm. The Al0.32Ga0.68N/In0.1Ga0.9N/GaN HFET device with a 500 Å InGaN channel layer has maximum drain current (518 mA/mm) and maximum intrinsic transconductance (167 mS/mm).
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; 1 micron; 100 Å; 300 Å; 500 Å; Al0.32Ga0.68N-In0.1Ga0.9N-GaN; HFET device; carrier confinement layers; channel thickness influence; drain current; electrical characteristics; heterostructure field effect transistors; intrinsic transconductance; sheet concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060674
