DocumentCode
968381
Title
Stable passivation technique for high-temperature polycrystalline silicon on insulator MOSFETs for MEMS integration
Author
Bhat, K.N. ; Daniel, R.J. ; Bhattacharya, E.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol.-Madras, Chennai, India
Volume
42
Issue
12
fYear
2006
fDate
6/8/2006 12:00:00 AM
Firstpage
721
Lastpage
722
Abstract
A passivation technique is reported based on selective doping of the polycrystalline silicon grain boundaries with phosphorus. The polycrystalline silicon on insulator (PSOI) MOSFETs fabricated on films passivated by this method show considerable improvement in the overall performance compared with unpassivated devices. This technique is compatible with high-temperature micro-electromechanical systems (MEMS) processes and hence can be used to integrate PSOI MOSFETs with MEMS structures and devices.
Keywords
MOSFET; elemental semiconductors; grain boundaries; micromechanical devices; passivation; phosphorus; semiconductor doping; silicon; silicon-on-insulator; MEMS integration; PSOI MOSFET; Si:P; grain boundaries; high-temperature polycrystalline silicon on insulator; microelectromechanical systems; passivation technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20060480
Filename
1642498
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