Stable passivation technique for high-temperature polycrystalline silicon on insulator MOSFETs for MEMS integration

A passivation technique is reported based on selective doping of the polycrystalline silicon grain boundaries with phosphorus. The polycrystalline silicon on insulator (PSOI) MOSFETs fabricated on films passivated by this method show considerable improvement in the overall performance compared with unpassivated devices. This technique is compatible with high-temperature micro-electromechanical systems (MEMS) processes and hence can be used to integrate PSOI MOSFETs with MEMS structures and devices.