• DocumentCode
    968413
  • Title

    1.5 ¿m region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

  • Author

    Matsuoka, T. ; Takahei, K. ; Noguchi, Y. ; Nagai, Hiroto

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • Firstpage
    12
  • Lastpage
    14
  • Abstract
    InP/GaInAsP buried heterostructure (BH) lasers for the 1.5 ¿m region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; InP/GaInAsP buried heterostructure lasers; p-n heterojunctions; semi insulating substrate; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810010
  • Filename
    4245470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968413