Title :
1.5 ¿m region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates
Author :
Matsuoka, T. ; Takahei, K. ; Noguchi, Y. ; Nagai, Hiroto
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
InP/GaInAsP buried heterostructure (BH) lasers for the 1.5 ¿m region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; InP/GaInAsP buried heterostructure lasers; p-n heterojunctions; semi insulating substrate; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810010
