Title :
Transient temperature response of vertical-cavity surface-emitting semiconductor lasers
Author :
Zhao, Y.G. ; McInerney, J.G.
Author_Institution :
Dept. of Phys., Peking Univ., Beijing, China
fDate :
9/1/1995 12:00:00 AM
Abstract :
Transient temperature rises in vertical-cavity surface-emitting semiconductor lasers (VCSEL´s) have been calculated using Green´s function methods. The influence of current spreading, material parameters, and operating conditions on the transient thermal response have been investigated. The results show that current spreading plays an important role in the transient thermal properties of VCSEL´s; under pulsed operation the temperature profile in the active layer changes with time up to a delay of several microseconds. The calculated results are in good agreement with the measured data
Keywords :
Green´s function methods; III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; Green´s function methods; In0.2Ga0.8As-GaAs; active layer; current spreading; material parameters; operating conditions; pulsed operation; temperature profile; transient temperature response; transient thermal properties; transient thermal response; vertical-cavity surface-emitting semiconductor lasers; Distributed Bragg reflectors; Heating; Laser modes; Optical surface waves; Power lasers; Response surface methodology; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
