• DocumentCode
    968449
  • Title

    InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 ¿m

  • Author

    Imai, H. ; Ishikawa, Hiroshi ; Tanahashi, Toshiyuki ; Takusagawa, M.

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • Firstpage
    17
  • Lastpage
    19
  • Abstract
    InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 ¿m are reported. The CW threshold current at 25°C is only 82 mA and the maximum temperature where CW lasing is obtained is 65°C. The characteristic temperature of the pulsed threshold current is 60 K. The transverse mode is fundamental and the longitudinal mode is single up to 1.5 times the threshold under CW operation. A few samples operated for over 1000 h at 50°C under constant optical power operation of 5 mW/facet.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; CW threshold current; III-V semiconductors; InGaAsP-InP laser; longitudinal mode; optical power operation; separated multiclad layer stripe geometry; transverse mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810014
  • Filename
    4245474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968449