Title :
InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 ¿m
Author :
Imai, H. ; Ishikawa, Hiroshi ; Tanahashi, Toshiyuki ; Takusagawa, M.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 ¿m are reported. The CW threshold current at 25°C is only 82 mA and the maximum temperature where CW lasing is obtained is 65°C. The characteristic temperature of the pulsed threshold current is 60 K. The transverse mode is fundamental and the longitudinal mode is single up to 1.5 times the threshold under CW operation. A few samples operated for over 1000 h at 50°C under constant optical power operation of 5 mW/facet.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; CW threshold current; III-V semiconductors; InGaAsP-InP laser; longitudinal mode; optical power operation; separated multiclad layer stripe geometry; transverse mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810014
