A GaAs high power RF single-pole dual throw switch IC for digital-mobile communication system

Author

Miyatbuji, K. ; Ueda, Daisuke

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

30

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

979

Lastpage

983

Abstract

A high power GaAs monolithic RF switch IC that can handle powers over 5 W (P1 dB: 37 dBm) with a positive 5-V control voltage was developed. This high power handling capability was achieved by using a novel circuit configuration that makes possible the feeding forward of the input-signal to the control gates. The implemented Single Pole Dual Throw switch IC integrated with the coupling capacitors using a high dielectric material, Barium Strontium Titanate, shows an insertion loss less than 0.8 dB at 1 GHz and an isolation over 25 dB in a frequency range of 0.5-1.5 GHz

Keywords

III-V semiconductors; digital communication; gallium arsenide; mobile communication; power semiconductor switches; 0.5 to 1.5 GHz; 0.8 dB; 5 V; 5 W; BaSrTiO₃; GaAs; GaAs monolithic high power RF single-pole dual throw switch IC; coupling capacitors; dielectric material; digital-mobile communication system; feedforward circuit; insertion loss; isolation; Barium; Capacitors; Coupling circuits; Dielectric materials; Gallium arsenide; Monolithic integrated circuits; Radio frequency; Radiofrequency integrated circuits; Switches; Voltage control;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.406396

Filename

406396