• DocumentCode
    968553
  • Title

    Noise characteristics of semiconductor laser amplifiers

  • Author

    Mukai, Toshiharu ; Yamamoto, Yusaku

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • Firstpage
    31
  • Lastpage
    33
  • Abstract
    Noise characteristics of Fabry-Perot (FP) cavity type AlGaAs laser amplifiers are studied theoretically and experimentally. Noise power dependencies on pumping rate and input signal level are measured. Multimode rate equations with McCumber´s fluctuation operator are solved for the parabolic band and the exponential bandtail models, both with the no k-selection rule. Experimental results are in good agreement with theoretical predictions.
  • Keywords
    III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; AlGaAs laser amplifiers; III-V semiconductor; multimode rate equations; semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810024
  • Filename
    4245484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968553