DocumentCode :
968553
Title :
Noise characteristics of semiconductor laser amplifiers
Author :
Mukai, Toshiharu ; Yamamoto, Yusaku
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume :
17
Issue :
1
fYear :
1981
Firstpage :
31
Lastpage :
33
Abstract :
Noise characteristics of Fabry-Perot (FP) cavity type AlGaAs laser amplifiers are studied theoretically and experimentally. Noise power dependencies on pumping rate and input signal level are measured. Multimode rate equations with McCumber´s fluctuation operator are solved for the parabolic band and the exponential bandtail models, both with the no k-selection rule. Experimental results are in good agreement with theoretical predictions.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; AlGaAs laser amplifiers; III-V semiconductor; multimode rate equations; semiconductor device noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810024
Filename :
4245484
Link To Document :
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