High speed III-V electrooptic waveguide modulators at λ-1.3 μm

Author

Wang, S.Y. ; Lin, S.H.

Author_Institution

Hewlett-Packard Labs., Palo Alto, CA, USA

Volume

6

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

758

Lastpage

771

Abstract

Traveling wave GaAs electrooptic waveguide modulators at a wavelength of 1.3 μm with bandwidth in excess of 20 GHz have been developed and characterized. The design and characteristics of both p-i-n modulators in microstrip configuration and Schottky barrier on n ^--GaAs/semi-insulating (SI) GaAs in the coplanar strip configuration modulators are discussed. It is shown that microwave loss and slowing on n⁺ GaAs substrates will limit the bandwidth of the microstrip modulator to less than 10 GHz for a device 8 mm in length. Modulators with bandwidths in excess of 10 GHz are fabricated on SI GaAs substrates

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; integrated optics; optical modulation; optical waveguides; GaAs electrooptic waveguide modulators; III-V semiconductors; Schottky barrier; coplanar strip configuration; microstrip configuration; p-i-n modulators; traveling wave modulators; Bandwidth; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; III-V semiconductor materials; Microstrip; Microwave devices; PIN photodiodes; Schottky barriers; Strips;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.4064

Filename

4064