Picosecond time-resolved laser mass spectroscopy

Author

von der Linde, Dietrich ; Danielzik, Burkhard

Author_Institution

Inst. fuer Laser- und Plasmaphys., Univ. GHS-Essen, West Germany

Volume

25

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2540

Lastpage

2549

Abstract

The extension of laser mass spectroscopy to the picosecond time domain and the application of this method to the study of fast surface processes is described. The technique is based on a pump-probe scheme in which a first pulse stimulates the desorption of surface material, and a second delayed pulse is used to photoionize the desorbed particles to allow detection with a mass spectrometer. Measurements on picosecond-laser-heated GaAs surfaces demonstrate the feasibility of the method. For example, it was possible to measure the thermal desorption of Ga and of Ga₂O with picosecond time resolution

Keywords

III-V semiconductors; desorption; gallium arsenide; high-speed optical techniques; mass spectroscopic chemical analysis; mass spectroscopy; time resolved spectra; time resolved spectroscopy; Ga; Ga₂O; GaAs; desorbed particles; fast surface processes; mass spectrometer; photoionize; picosecond time domain; picosecond time resolution; picosecond-laser-heated GaAs surfaces; pump-probe scheme; semiconductor; surface material desorption; thermal desorption; time-resolved laser mass spectroscopy; Atom lasers; Atomic beams; Atomic measurements; Chemical lasers; Mass spectroscopy; Optical materials; Optical pulses; Pump lasers; Surface emitting lasers; Surface treatment;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.40640

Filename

40640