DocumentCode :
968605
Title :
High Stability Cosputtered Ta-50 At. %Al Alloy Film Resistors
Author :
Huber, F. ; Jaffe, D.
Author_Institution :
Bell Telephone Labs.
Volume :
8
Issue :
2
fYear :
1972
fDate :
6/1/1972 12:00:00 AM
Firstpage :
4
Lastpage :
9
Abstract :
The potential of sputtered Ta-50 at. % Al alloy films for tantalum integrated circuit resistor applications was evaluated. Test resistors covering a range of 25 to 1000 \\Omega /o were fabricated from 900 to 1500 AA thick alloy films (on ceramic substrates) using two different anodic thinning-stabilization heat treatment process sequences. The effect of initial thickness and process sequence on stability was determined by accelerated aging, thermally at 250 and 15O°C, and under DC power at 2 watts (6.2 watts/cm2). It was found that the Ta-50 at. % Al alloys offer outstanding potential for circuit and R-C network applications requiring highly stable 25 to 1000 \\Omega /o film resistors. For such applications, the alloys exhibit a combination of attractive characteristics which include: 1) the ability to readily adjust the sheet resistance by anodization; 2) the maintenance of a relatively constant temperature coefficient of resistance; 3) excellent stability during both thermal and power aging tests.
Keywords :
Aluminum alloys; Application specific integrated circuits; Ceramics; Circuit stability; Circuit testing; Heat treatment; Resistors; Substrates; Thermal resistance; Thermal stability;
fLanguage :
English
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
0361-1000
Type :
jour
DOI :
10.1109/TPHP.1972.1136562
Filename :
1136562
Link To Document :
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