Title :
Theory of switching in polysilicon-n-p+ silicon structures
Author :
Board, K. ; Darwish, M.
Author_Institution :
University College of Swansea, Department of Electrical & Electronic Engineering, Swansea, UK
Abstract :
A simple theory is proposed for observed switching in polysilicon-n-p+ devices using a single grain for the polysilicon layer. The switching mechanism is similar to that in the tunnel oxide device but differs in that the conduction mechanism in the polysilicon is by thermionic emission rather than tunnelling. Alternative implementations are suggested using ion implantation, or molecular beam epitaxial gallium arsenide.
Keywords :
electrical conductivity transitions; elemental semiconductors; p-n homojunctions; semiconductor device models; semiconductor switches; silicon; GaAs; MBE; elemental semiconductors; ion implantation; model; poly Si-n-p+ devices; switching mechanism; thermionic emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810030
