Title :
Determination of the Relative Nitrogen Doping Level of Tantalum Nitride Resistor Film by Means of the Seebeck Effect
Author_Institution :
Bell Telephone Laboratories, Inc., Allentown, Pa.
fDate :
9/1/1972 12:00:00 AM
Keywords :
Aging; Conductivity; Doping; Instruments; Nitrogen; Optical films; Resistors; Sputtering; Thermoelectricity; X-ray diffraction;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1972.1136576
