• DocumentCode
    968765
  • Title

    Characterization of Al0.3Ga0.7As/GaAs quantum-well delta-doped channel FET grown by molecular-beam epitaxy

  • Author

    Hong, Woo-Pyo ; Harbison, J. ; Florez, L.T. ; Abeles, J.H.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    36
  • Issue
    11
  • fYear
    1989
  • fDate
    11/1/1989 12:00:00 AM
  • Firstpage
    2615
  • Lastpage
    2616
  • Abstract
    Summary form only given. The authors investigated the transport properties of electrons in delta-doped channels formed both in bulk GaAs and in quantum wells by Hall and Schubnikov-de Haas measurements. They also investigated the DC and microwave characteristics of FETs made from Al0.3Ga0.7As/GaAs heterostructures with a quantum-well delta-doped channel. FETs showed a high drain current capability, large breakdown voltage, low output conductance, large intrinsic transconductance, and large gate voltage swing around maximum transconductance.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor quantum wells; solid-state microwave devices; Al0.3Ga0.7As-GaAs; DC characteristics; Hall effect measurements; Schubnikov-de Haas measurements; breakdown voltage; bulk GaAs; delta-doped channel FET; electrons; gate voltage swing; heterostructures; high drain current capability; intrinsic transconductance; microwave characteristics; molecular-beam epitaxy; output conductance; quantum-well; transport properties; Breakdown voltage; Doping; Electrons; FETs; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Quantum well devices; Quantum wells; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43785
  • Filename
    43785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968765