Hot-electron degradation of n-channel polysilicon MOSFETs

Author

Banerjee, Sean ; Sundaresan, R. ; Shichijo, Hisashi ; Malhi, Satwinder

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

35

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

152

Lastpage

157

Abstract

The stability of the hydrogen passivation in hydrogenated n-channel polysilicon MOSFETs has been studied under thermal stress and hot-electron stress at elevated temperatures. Although the hydrogen passivation is stable at 150°C, channel hot-electron stress at high temperatures appears to create additional grain boundary traps, presumably by breaking the Si-H bonds at the grain boundaries. This mechanism is in addition to the creation of acceptor-type fast interface states that occur in bulk MOSFETs

Keywords

elemental semiconductors; grain boundaries; hot carriers; insulated gate field effect transistors; interface electron states; passivation; semiconductor device testing; silicon; thermal stresses; H₂ passivation; Si; acceptor-type fast interface states; grain boundary traps; hot electron degradation; hot-electron stress; polysilicon n-channel MOSFETs; thermal stress; Grain boundaries; Hydrogen; Interface states; Leakage current; MOSFETs; Passivation; Temperature; Thermal degradation; Thermal stability; Thermal stresses;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2434

Filename

2434