Title :
Hot-electron degradation of n-channel polysilicon MOSFETs
Author :
Banerjee, Sean ; Sundaresan, R. ; Shichijo, Hisashi ; Malhi, Satwinder
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
2/1/1988 12:00:00 AM
Abstract :
The stability of the hydrogen passivation in hydrogenated n-channel polysilicon MOSFETs has been studied under thermal stress and hot-electron stress at elevated temperatures. Although the hydrogen passivation is stable at 150°C, channel hot-electron stress at high temperatures appears to create additional grain boundary traps, presumably by breaking the Si-H bonds at the grain boundaries. This mechanism is in addition to the creation of acceptor-type fast interface states that occur in bulk MOSFETs
Keywords :
elemental semiconductors; grain boundaries; hot carriers; insulated gate field effect transistors; interface electron states; passivation; semiconductor device testing; silicon; thermal stresses; H2 passivation; Si; acceptor-type fast interface states; grain boundary traps; hot electron degradation; hot-electron stress; polysilicon n-channel MOSFETs; thermal stress; Grain boundaries; Hydrogen; Interface states; Leakage current; MOSFETs; Passivation; Temperature; Thermal degradation; Thermal stability; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
