Title :
High-Power Frequency Stabilized GaSb DBR Tapered Laser
Author :
Müller, Mirjam ; Bauer, Adam ; Lehnhardt, Thomas ; Kamp, Martin ; Forchel, Alfred
Author_Institution :
Tech. Phys., Univ. Wurzburg, Wurzburg
Abstract :
The authors present distributed Bragg reflector (DBR) tapered lasers fabricated on the GaInSb-AlGaAsSb material system. These index guided tapered lasers are equipped with first-order chromium DBRs acting as frequency-selective mirrors on the rear facet. Hence, high-power wavelength stabilized lasers could be realized. The devices exhibit output powers of up to 87 mW and sidemode suppression ratios of 40 dB at an emission wavelength of 2.03 mum in continuous-wave operation.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser frequency stability; laser mirrors; optical fabrication; optical materials; refractive index; semiconductor lasers; DBR tapered laser fabrication; GaInSb-AlGaAsSb; continuous-wave operation; distributed Bragg reflector; first-order chromium DBR; frequency-selective mirrors; high-power frequency stabilized laser; high-power wavelength stabilized lasers; index guided tapered lasers; laser emission wavelength; power 87 mW; sidemode suppression ratios; wavelength 2.03 mum; Distributed Bragg reflector (DBR) laser; GaSb; frequency stabilized; tapered laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2007303
