Title :
Transverse mode control in InGaAsP/InP buried crescent diode lasers
Author :
Oomura, E. ; Higuchi, H. ; Hirano, R. ; Namizaki, H. ; Murotani ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Abstract :
Transverse mode stabilisation of InGaAsP/InP buried crescent laser diodes emitting at 1.3 ¿m is described. Width and thickness of the active region have been reduced to stabilise the transverse mode. Operation up to 17 mW/facet in a stable transverse mode and threshold current as low as 12 mA in CW operation have been obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; CW operation; InGaAsP/InP buried crescent laser diodes; threshold current; transverse mode stabilisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810060
