Title :
The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers
Author :
Tan, C.L. ; Djie, H.S. ; Wang, Y. ; Dimas, C.E. ; Hongpinyo, V. ; Ding, Y.H. ; Ooi, B.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum dash lasers; semiconductor lasers; InAs-InAlGaAs; InP; electroluminescence spectrum; nonequilibrium carrier distribution; photon reabsorption; quantum-dash lasers; quantum-dash-in-well semiconductor lasers; quantum-dot lasers; room-temperature lasing spectra; substrate; Nonequilibrium distribution; quantum-dash (Qdash); quantum-dot (QD); supercontinuum broadband laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2008197
