DocumentCode
968938
Title
Preparation of Nb3 Ge superconducting tunneling junctions
Author
Buitrago, R.H. ; Goldman, A.M. ; Toth, L.E. ; Cantor, R.
Author_Institution
El Consejo Nacional de Investigacions Cientificas y Technologicas de la Republica Argentina
Volume
15
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
589
Lastpage
590
Abstract
A procedure in which Auger electron spectroscopy (AES) is used to control barrier thickness has been developed for the fabrication of Nb3 Ge-Al2 O3 -Pb tunneling junctions. Both high-resistance and low-resistance Josephson junctions have been made using this technique. A similar procedure has been used to form junctions of V3 Si crystals.
Keywords
Josephson devices; Crystals; Electrons; Fabrication; Josephson junctions; Niobium; Rough surfaces; Spectroscopy; Superconducting films; Surface roughness; Tunneling;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1979.1060081
Filename
1060081
Link To Document