• DocumentCode
    969018
  • Title

    The development of device lithography

  • Author

    Herriott, Donald R.

  • Author_Institution
    Perkin-Elmer Corporation, Norwalk, CT
  • Volume
    71
  • Issue
    5
  • fYear
    1983
  • fDate
    5/1/1983 12:00:00 AM
  • Firstpage
    566
  • Lastpage
    570
  • Abstract
    Lithography has been the principal pacing element in the development of complex integrated circuits. Although major programs in electron-beam lithography and X-ray lithography have developed new systems with smaller feature capability, the optical systems remain the only candidates for large-volume device production. Scanning and step-and-repeat optical systems have been developed for the next generation of devices with 1-µm features. Electron beams are used for mask fabrication and direct exposure of special devices of exceptional value or for prototypes. X-ray and ion systems are being developed for future devices.
  • Keywords
    Conducting materials; Costs; Electron optics; Integrated circuit interconnections; Optical devices; Particle beam optics; Printing; Resists; Silicon; X-ray lithography;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1983.12639
  • Filename
    1456907