• DocumentCode
    969089
  • Title

    Schottky drain microwave GaAs field effect transistors

  • Author

    Meignant, D. ; Boccon-Gibod, D.

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    17
  • Issue
    3
  • fYear
    1981
  • Firstpage
    107
  • Lastpage
    108
  • Abstract
    A technology is described for the fabrication of Schottky drain microwave GaAs FETs. Preliminary DC and microwave results are given together with expected advantages of this new FET structure.
  • Keywords
    III-V semiconductors; Schottky effect; field effect transistors; gallium arsenide; solid-state microwave devices; III-V semiconductor; Schottky drain microwave GaAs FETs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810076
  • Filename
    4245538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969089