Title :
Schottky drain microwave GaAs field effect transistors
Author :
Meignant, D. ; Boccon-Gibod, D.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
A technology is described for the fabrication of Schottky drain microwave GaAs FETs. Preliminary DC and microwave results are given together with expected advantages of this new FET structure.
Keywords :
III-V semiconductors; Schottky effect; field effect transistors; gallium arsenide; solid-state microwave devices; III-V semiconductor; Schottky drain microwave GaAs FETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810076
