GaAs microwave devices and circuits with submicron electron-beam defined features

This paper describes the fabrication and application of GaAs FET´s, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.