• DocumentCode
    969141
  • Title

    Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE

  • Author

    Hirtz, J.P. ; Razeghi, M. ; Larivain, J.P. ; Hersee, S. ; Duchemin, J.P.

  • Author_Institution
    Thomson-CSF, LCR, Orsay, France
  • Volume
    17
  • Issue
    3
  • fYear
    1981
  • Firstpage
    113
  • Lastpage
    115
  • Abstract
    Room temperature pulsed operation has been achieved in the 1.2¿1.3 ¿m region for GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaInAsP/InP lasers; III-V semiconductor; low pressure metalorganic vapour phase epitaxy; threshold temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810081
  • Filename
    4245543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969141