Title :
GaAs MESFET circuit simulation model including negative differential mobility
Author :
Takada, Tatsuo ; Yokoyama, Kazuya ; Hirayama, Motoko
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A simple one-dimensional GaAs MESFET model for circuit simulation is presented which takes into account negative differential mobility. In this model, the drain current is derived from the electric field strength at the source side edge under the gate using a gradual depletion layer approximation. The calculated I/V characteristics agree well with the experimental data for GaAs power MESFETs, which show negative differential resistances. The proposed model can be used in computer aided design of GaAs integrated circuits and amplifiers with the great advantage of a small calculation time compared with that of 2-dimensional analysis.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs MESFET model; I/V characteristics; III-V semiconductors; circuit simulation; computer aided design; depletion layer approximation; drain current; electric field strength; negative differential mobility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810094
