Title :
Optoelectronic matrix switch using heterojunction switching photodiodes
Author :
Hara, E.H. ; Machida, Shimon ; Ikeda, Makoto ; Kanbe, H. ; Kimura, Tomohiro
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3×3 matrix switch. Isolation and cross-talk losses were better than 63 dB over a frequency range of 10 Hz to 400 MHz and 400 Mbit/s digital signals were switched with switching times shorter than 30 ns.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; photodiodes; semiconductor switches; 10 Hz to 400 MHz; InGaAs/InP; heterojunction switching photodiode; optoelectronic matrix switch; semiconductor switches;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810106
