• DocumentCode
    969462
  • Title

    Void formation mechanism in VLSI aluminum metallization

  • Author

    Hinode, Kenji ; Asano, Isamu ; Homma, Yoshio

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    36
  • Issue
    6
  • fYear
    1989
  • fDate
    6/1/1989 12:00:00 AM
  • Firstpage
    1050
  • Lastpage
    1055
  • Abstract
    Void formation is aluminum lines caused by high-temperature heat treatment has been investigated, particularly from the aspect of mechanical interaction between the passivation layer and aluminum lines. It is found that there are two effects causing voids in aluminum lines: the deformation of the passivation layer and the so-called thermal expansion mismatch between aluminum lines and their surrounding layers. While the thermal expansion effect is independent of aluminum line dimensions, the passivation deformation effect dominates preferentially in wide aluminum lines. Bulge deformation of the passivation layer is caused by its own compressive stress, forcing the encapsulated aluminum to expand. In fine lines, void formation is controlled by the volume difference caused by the thermal expansion mismatch and aluminum diffusion
  • Keywords
    VLSI; aluminium; failure analysis; integrated circuit technology; metallisation; passivation; reliability; Al diffusion; Al-Cu-Si metallisation; Si; Si3N4-Al-Si; bulge deformation; compressive stress; fine lines; high-temperature heat treatment; mechanical interaction; passivation deformation effect; passivation film stress; passivation layer; thermal expansion mismatch; void formation mechanism; volume difference; Aluminum; Heat treatment; Metallization; Optical films; Optical microscopy; Passivation; Plasma temperature; Scanning electron microscopy; Transmission electron microscopy; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.24347
  • Filename
    24347