DocumentCode
969499
Title
Bistable operation in semiconductor lasers with inhomogeneous excitation
Author
Kawaguchi, H. ; Iwane, G.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
17
Issue
4
fYear
1981
Firstpage
167
Lastpage
168
Abstract
Bistable operation in InP/InGaAsP/InP DH lasers with a periodic excitation stripe geometry is reported. Bistability is observed within a current range of about 10% of the threshold current for maximum value. The range strongly depends on the stripe geometry and heat sink temperature, and they are controllable.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical bistability; semiconductor junction lasers; III-V semiconductors; InP/InGaAsP/InP; heat sink temperature; inhomogeneous excitation; periodic excitation stripe geometry; semiconductor junction lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810117
Filename
4245580
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